Performance Measurements of Photodiodes for X-Ray Detection
نویسندگان
چکیده
The X-ray free-electron laser (XFEL) at the Pohang Accelerator Laboratory (PAL), Pohang, South Korea, provides energies of up to 15 keV depending on experimental purpose. Silicon-based devices have been used as diagnostic and detectors for X-rays in stations. Considering recent domestic international circumstances, developing silicon-based in-house is necessary. We developed a silicon p-intrinsic-n (PIN) photodiode (PD) detection, its performance was investigated compared with that commercial PD PAL-XFEL. designed be 1 cm $\times1$ size, it junction side signal readout ohmic entrance. absorption length 12-keV suitable crystallography, 500- notation="LaTeX">$ {\mu }\text{m}$ -thick wafer high resistivity fabrication. It has guard ring, an n+ edge field shaper, antireflection coating (ARC) available four different types based metal structure sides. present here electrical characteristics PDs. depletion voltage which bulk fully depleted determined 119.7 ± 8.2 V from capacitance measurements, operation set 200 V. PDs leakage currents less than 30 nA/cm 2 were chosen measurements. signal-to-noise ratio (SNR) Sr-90 radioactive source corresponding minimum ionizing particle (MIP) quantum efficiency (QE) wavelengths 300–1000 nm measured. Beam tests conducted PAL-XFEL using 600-, 900-, 1200-eV where responses ultrahigh brightness ultrashort pulses checked. energy resolutions measured gamma-ray sources, Am-241 (59.5 keV), Ba-133 (31.0 81.0 keV). differences among are presented herein terms characteristics, SNR, QE, response pulses, resolutions. results fabricated also those PD.
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2022
ISSN: ['0018-9499', '1558-1578']
DOI: https://doi.org/10.1109/tns.2022.3186481